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maxim integrated products 1 ? ?()? 19-6161; rev 0; 3/12 ?? pmbussmif, inc.?? ??????? china.maxim-ic. com/max14850.related max14850?6??maxim?? ?????????? ???????? ? ???dc50mbps? ???????? ??????dc2mbps? ? 3.0v5.5v????? ?????max14850? spi???i 2 c ?rs-232rs-485/ rs-422??????? ?????? max14850?16?so (10mm x 4mm)? - 40 c + 125 c?? ? ??? i 2 cspismbuspmbus ? ? rs-232rs-485/rs-422 ?? ? ??? s ? ? 600v rms 60 ? s ?? ? ??2/2 ? ??? ? 50mbps (?)? ? 2mbps (?)?? s ????? ? ??i 2 c ? spi ? rs-232rs-422/rs-485 ? smbuspmbus? i/ oa1 rst cs sclk adc mosi miso gpio1 i/ oa2 gpio2 ina1 sclk ina2 mosi outa1 miso outa2 i/ ob 1 i/ ob 2 outb1 outb2 inb1 inb2 gpio3 c gnda gndb v cca v ccb r pu a r pu a r pu b r pu b 0.1f 0.1f 3.3v 5v v ccb monitor max14850 600v rm s isolation max14850 ?? ??????????????? ?????maxim?10800 852 1249 ()10800 152 1249 () maxim?china.maxim-ic.com
maxim integrated products 2 max14850 ?? v cca to gnda ........................................................ -0.3v to +6v v ccb to gndb ........................................................ -0.3v to +6v outa1, outa2 to gnda ..................... -0.3v to (v cca + 0.3v) outb1, outb2 to gndb ..................... -0.3v to (v ccb + 0.3v) inb1, inb2, i/oa1, i/oa2 to gnda ........................ -0.3v to +6v ina1, ina2, i/ob1, i/ob2 to gndb ........................ -0.3v to +6v short-circuit duration (outa_ to gnda or v cca , outb_ to gndb or v ccb ) ......................... continuous continuous current (i/oa_, i/ob_) pin ............................ q50ma continuous power dissipation (t a = +70nc) so (derate 13.3mw/nc above +70nc) .................. 1067mw operating temperature range ........................ -40nc to +125nc junction temperature ..................................................... +150nc storage temperature range ............................ -65nc to +150nc lead temperature (soldering, 10s) ................................ +300nc soldering temperature (reflow) ...................................... +260nc absolute maximum ratings note 1: package thermal resistances were obtained using the method described in jedec specification jesd51-7, using a four- layer board. for detailed information on package thermal considerations, refer to china.maxim-ic.com/thermal-tutorial. stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. so junction-to-ambient thermal resistance (b ja ) .......... 75nc/w junction-to-case thermal resistance (b jc ) ............... 24nc/w package thermal characteristics (note 1) electrical characteristics (v cca C v gnda = 3.0v to 5.5v, v ccb C v gndb = 3.0v to 5.5v, t a = -40c to +125c, unless otherwise noted. typical values are at v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, and t a = +25c.) (note 2) parameter symbol conditions min typ max unit dc characteristics supply voltage v cca relative to gnda 3.0 5.5 v v ccb relative to gndb 3.0 5.5 supply current i cca, i ccb unidirectional inputs at dc or 2mbps; bidirectional inputs at dc or switching at 2mbps. no load. v cca = +5v, v ccb = +5v 7.2 11 ma v cca = +3.3v, v ccb = +3.3v 6.2 9.5 all inputs switching at max data rate. no load. (note 3) v cca = +5v, v ccb = +5v t a = +25c 15 22 t a = +125c 17 24 v cca = +3.3v, v ccb = +3.3v t a = +25c 10 16 t a = +125c 11 18 undervoltage lockout threshold v uvlo v cca - v gnda , v ccb - v gndb (note 4) 2 v undervoltage lockout hysteresis v uvlohys v cca - v gnda , v ccb - v gndb (note 4) 0.1 v
maxim integrated products 3 max14850 ?? electrical characteristics (continued) (v cca C v gnda = 3.0v to 5.5v, v ccb C v gndb = 3.0v to 5.5v, t a = -40c to +125c, unless otherwise noted. typical values are at v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, and t a = +25c.) (note 2) parameter symbol conditions min typ max unit isolation characteristics isolation voltage v iso t = 60s (note 5) 600 v rms working isolation voltage v iowm v gndb - v gnda continuous (note 3), 50-year life expectancy (figure 4) 200 v rms esd protection all pins 2.5 kv logic inputs and outputs input threshold voltage v it i/oa1, i/oa2, relative to gnda 0.5 0.7 v input logic-high voltage v ih ina1, ina2, relative to gnda 0.7 x v cca v inb1, inb2, relative to gndb 0.7 x v ccb i/oa1, i/oa2, relative to gnda 0.7 i/ob1, i/ob2, relative to gndb 0.7 x v ccb input logic-low voltage v il ina1, ina2, relative to gnda 0.8 v inb1, inb2, relative to gndb 0.8 i/oa1, i/oa2, relative to gnda 0.5 i/ob1, i/ob2, relative to gndb 0.3 x v ccb output logic-high voltage v oh outa1, outa2, relative to gnda, source current = 4ma v cca - 0.4 v outb1, outb2, relative to gndb, source current = 4ma v ccb - 0.4 output logic-low voltage v ol outa1, outa2, relative to gnda, sink current = 4ma 0.8 v outb1, outb2, relative to gndb, sink current = 4ma 0.8 i/oa1, i/oa2, relative to gnda, sink current = 10ma 0.6 0.9 i/oa1, i/oa2, relative to gnda, sink current = 0.5ma 0.6 0.85 i/ob1, i/ob2, relative to gndb, sink current = 30ma 0.4 input/output logic-low threshold difference dv tol i/oa1, i/oa2 (note 6) 50 mv input capacitance c in ina1, ina2, inb1, inb2, f = 1mhz 2 pf dynamic switching characteristics common-mode transient immunity dv iso /dt v in = v cc_ or v gnd_ (notes 3, 7) 1.5 kv/fs
maxim integrated products 4 max14850 ?? electrical characteristics (continued) (v cca C v gnda = 3.0v to 5.5v, v ccb C v gndb = 3.0v to 5.5v, t a = -40c to +125c, unless otherwise noted. typical values are at v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, and t a = +25c.) (note 2) parameter symbol conditions min typ max unit maximum data rate (note 3) dr max ina1 to outb1, ina2 to outb2, inb1 to outa1, inb2 to outa2 50 mbps i/oa1 to i/ob1, i/oa2 to i/ob2, i/ob1 to i/oa1, i/ob2 to i/oa2 2 minimum pulse width pw min ina1 to outb1, ina2 to outb2, inb1 to outa1, inb2 to outa2 (note 3) 20 ns propagation delay (note 3) t dplh t dphl ina1 to outb1, ina2 to outb2, inb1 to outa1, inb2 to outa2, r l = 1mi , c l = 15pf, figure 1 v cca = v ccb = +3.3v 20 30 ns v cca = v ccb = +5v 18 26 i/oa1 to i/ob1, i/oa2 to i/ob2, r 1 = 1.6ki, r 2 = 180i, c l1 = c l2 = 15pf, figure 2 v cca = v ccb = +3.3v 30 100 v cca = v ccb = +5v 30 100 i/ob1 to i/oa1, i/ob2 to i/oa2, r 1 = 1ki, r 2 = 120i, c l1 = c l2 = 15pf, figure 2 v cca = v ccb = +3.3v 60 100 v cca = v ccb = +5v 60 100 pulse-width distortion |t dplh C t dphl | (notes 3, 8) pwd ina1 to outb1, ina2 to outb2, inb1 to outa1, inb2 to outa2, r l = 1mi, c l = 15pf, figure 1 v cca = v ccb = +3.3v 7 ns v cca = v ccb = +5v 7 i/oa1 to i/ob1, i/oa2 to i/ob2, r 1 = 1.6ki, r 2 = 180i, c l1 = c l2 = 15pf, figure 2 v cca = v ccb = +3.3v 12 v cca = v ccb = +5v 12 i/ob1 to i/oa1, i/ob2 to i/oa2, r 1 = 1ki, r 2 = 120i, c l1 = c l2 = 15pf, figure 2 v cca = v ccb = +3.3v 60 v cca = v ccb = +5v 50
maxim integrated products 5 max14850 ?? electrical characteristics (continued) (v cca C v gnda = 3.0v to 5.5v, v ccb C v gndb = 3.0v to 5.5v, t a = -40c to +125c, unless otherwise noted. typical values are at v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, and t a = +25c.) (note 2) parameter symbol conditions min typ max unit channel-to-channel skew (notes 3, 8) t dskewcc outb1 to outb2 output skew, figure 1 v cca = v ccb = +3.3v 3 ns v cca = v ccb = +5v 3 outa1 to outa2 output skew, figure 1 v cca = v ccb = +3.3v 3 v cca = v ccb = +5v 3 i/ob1 to i/ob2 output skew, figure 2 v cca = v ccb = +3.3v 6 v cca = v ccb = +5v 5 i/oa1 to i/oa2 output skew, figure 2 v cca = v ccb = +3.3v 20 v cca = v ccb = +5v 20 part-to-part skew (notes 3, 8) t dskewpp dt dplh , dt dphl 8 ns rise time (note 3) t r outa1, outa2, outb1, outb2, 10% to 90%, figure 1 5 ns fall time (note 3) t f outa1, outa2, outb1, outb2, 90% to 10%, figure 1 5 ns i/oa1, i/oa2, 90% to 10%, r 1 = 1.6ki, r 2 = 180i, c l1 = c l2 = 15pf, figure 2 v cca = v ccb = +3.3v 30 60 v cca = v ccb = +5v 40 80 i/ob1, i/ob2, 90% to 10%, r 1 = 1ki, r 2 = 120i, c l1 = c l2 = 15pf, figure 2 v cca = v ccb = +3.3v 3 6 v cca = v ccb = +5v 3 5
maxim integrated products 6 max14850 ?? insulation and safety characteristics note 2: all units are production tested at t a = +25c. specifications over temperature are guaranteed by design. all voltages of side a are referenced to gnda. all voltages of side b are referenced to gndb, unless otherwise noted. note 3: guaranteed by design. not production tested. note 4: the undervoltage lockout threshold and hysteresis guarantee that the outputs are in a known state during a slump in the supplies. see the detailed description section for more information. note 5: the isolation is guaranteed for t = 60s, and tested at 120% of the guaranteed value for 1s. note 6: dv tol = v ol C v il . this is the minimum difference between the output logic-low voltage and the input logic threshold for the same i/o pin. this ensures that the i/o channels are not latched low when any of the i/o inputs are driven low (see the bidirectional channels section). note 7: the common-mode transient immunity guarantees that the device will hold its outputs stable when the isolation voltage changes at the specified rate. note 8: pulse-width distortion is defined as the difference in propagation delay between low-to-high and high-to-low transitions on the same channel. channel-to-channel skew is defined as the difference in propagation delay between different chan- nels on the same device. part-to-part skew is defined as the difference in propagation delays (for unidirectional channels) between different devices, when both devices operate with the same supply voltage, at the same temperature and have identical package and test circuits. parameter symbol conditions value unit iec insulation and safety related for specifications for soic-16 external tracking (creepage) cpg iec 60664-1 4.2 mm external air gap (clearance) clr iec 60664-1 4.2 mm minimum internal gap insulation thickness 0.0026 mm tracking resistance (comparative tracking index) cti iec 112/vde 030 part 1 175 v insulation resistance across barrier r iso 1 gw capacitance across isolation barrier c io f = 1mhz 12 pf vde iec insulation characteristics surge isolation voltage v iosm iec 60747-17, section 5.3.1.6 and 5.4.6 for basic insulation 1 kv peak repetitive peak isolation voltage v iorm iec 60747-17, section 5.3.1.3 282 v peak rated transient isolation voltage v iotm iec 60747-17, section 5.3.1.4 850 v peak safety limiting temperature t s iec 60747-17, section 7.2.1 +150 c safety limiting side a power dissipation p sa iec 60747-17, section 7.2.1 0.75 w safety limiting side b power dissipation p sb iec 60747-17, section 7.2.1 0.75 w apparent charge method q pd iec 60747-17, section 7.4, method a and b 5 pc overvoltage category iec 60664-1, single- or three-phase 50v dc or ac i, ii overvoltage category iec 60664-1, single- or three-phase 100v dc or ac i climatic category 40/125/21 pollution degree din vde 0110, table 1 2
maxim integrated products 7 max14850 ?? ?/?? ?1. ???(a)??(b) ?2. ????(a)??(b)(c) 0.1f v ccb v cca test source ina_ outb_ max14850 gnda gndb v cca v ccb c l r l 0.1f 50 (a) (b) v cca ina1, ina2 50% 50% 50% 50% 90% 10% 50% t dphl t dskewcc t f t r t dplh outb1 outb2 v ccb v ccb gnda gndb gndb v cca i/oa1, i/oa2 (a) (b) 50% 50% 50% 90% 50% 10% 50% t dphl t dskewcc t f t dplh i/ob1 i/ob2 v ccb v ccb gnda v ol (min) v ol (min) v ccb i/ob1, i/ob2 (c) 50% 50% 50% 50% 90% 10% 50% t dphl t f t dplh i/oa1 i/oa2 v cca v cca gndb v ol (min) v ol (min) t dskewcc 0.1f v ccb v cca test source i/oa_ i/ob_ max14850 gnda gndb v cca v ccb c l2 c l1 0.1f r 2 r 1
maxim integrated products 8 ? (v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, all inputs idle, t a = +25nc, unless otherwise noted.) i cca vs. data rate max14850 toc01 data rate (mbps) i cca (ma) 10 1 0.1 0.01 1 2 3 4 5 6 7 8 9 0 0.001 100 ina1/ina2 switching inb1/inb2 switching i ccb vs. data rate max14850 toc02 data rate (mbps) i ccb (ma) 10 1 0.1 0.01 1 2 3 4 5 6 7 8 9 0 0.001 100 inb1/inb2 switching ina1/ina2 switching i cca vs. data rate max14850 toc03 data rate (mbps) i cca (ma) 1 0.1 0.01 1 2 3 4 5 6 7 0 0.001 10 i/oa1/i/oa2 switching i/ob1/i/ob2 switching pullup = 2k i ccb vs. data rate max14850 toc04 data rate (mbps) i ccb (ma) 1 0.1 0.01 1 2 3 4 5 6 7 8 0 0.001 10 i/ob1/i/ob2 switching i/oa1/i/oa2 switching pullup = 2k i cca vs. v cca max14850 toc05 v cca (v) i cca (ma) 5.0 4.5 4.0 3.5 1 2 3 4 5 6 7 8 9 10 0 3.0 5.5 t a = +25c t a = -40c t a = +125c i ccb vs. v ccb max14850 toc06 v ccb (v) i ccb (ma) 5.0 4.5 4.0 3.5 1 2 3 4 5 6 7 8 9 10 0 3.0 5.5 t a = -40c t a = -40c t a = +125c i cc vs.temperature max14850 toc07 temperature (c) i cc (ma) 110 95 65 80 -10 5 20 35 50 -25 1 2 3 4 5 6 7 8 9 0 -40 125 i ccb i cca outa_ v oh vs. source current max14850 toc08 i source (ma) outa_ v oh (v) 60 45 30 15 1 2 3 4 5 0 07 5 v cca = 5v v cca = 3.3v outa_ v ol vs. sink current max14850 toc09 i sink (ma) outa_ v ol (v) 60 45 30 15 1 2 3 4 5 0 07 5 v cca = 5v v cca = 3.3v max14850 ??
maxim integrated products 9 ?() (v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, all inputs idle, t a = +25nc, unless otherwise noted.) outb_ v oh vs. source current max14850 toc10 i source (ma) outb_ v oh (v) 60 45 30 15 1 2 3 4 5 0 07 5 v ccb = 3.3v v ccb = 5v outb_ v ol vs. sink current max14850 toc11 i sink (ma) outb_ v ol (v) 60 45 30 15 1 2 3 4 5 0 07 5 v ccb = 3.3v v ccb = 5v propagation delay vs. supply voltage max1960 toc12 v dda (v) propagation delay (ns) 5.0 4.5 3.5 4.0 2 4 6 8 12 10 14 16 0 3.0 5.5 v gndb - v gnda = -100v v gndb - v gnda = +100v v gndb - v gnda = 0v v dda = v ddb ina_ to outb_ low to high transition v dda (v) propagation delay (ns) 5.0 4.5 4.0 3.5 2 4 6 8 10 12 0 3.0 5.5 propagation delay vs. supply voltage max14850 toc13 v gndb - v gnda = -100v v gndb - v gnda = +100v v gndb - v gnda = 0v v dda = v ddb ina_ to outb_ high to low transition propagation delay vs.capacitive load max14850 toc14 c l (pf) propagation delay (ns) 80 60 40 20 2 4 6 8 10 12 14 16 18 0 0 100 high to low ina_ to outb_ low to high propagation delay vs. temperature max14850 toc15 t a (c) propagation delay (ns) 110 95 65 80 -10 5 20 35 50 -25 2 4 6 8 10 12 14 16 18 0 -40 125 high to low ina_ to outb_ low to high propagation delay vs. supply voltage max1960 toc16 v dda (v) propagation delay (ns) 5.0 4.5 3.5 4.0 2 4 6 8 12 10 14 16 0 3.0 5.5 v gndb - v gnda = +100v v gndb - v gnda = -100v v gndb - v gnda = 0v v dda = v ddb inb_ to outa_ low to high transition v dda (v) propagation delay (ns) 5.0 4.5 4.0 3.5 2 4 6 8 10 12 0 3.0 5.5 propagation delay vs. supply voltage max14850 toc17 v gndb - v gnda = -100v v gndb - v gnda = +100v v gndb - v gnda = 0v v dda = v ddb inb_ to outa_ high to low transition propagation delay vs. capacitive load max14850 toc18 c l (pf) propagation delay (ns) 80 60 40 20 2 4 6 8 10 12 14 16 18 20 0 0 100 high to low inb_ to outa_ low to high max14850 ??
maxim integrated products 10 ?() (v cca C v gnda = 3.3v, v ccb C v gndb = 3.3v, all inputs idle, t a = +25nc, unless otherwise noted.) propagation delay vs. temperature max14850 toc19 t a (c) propagation delay (ns) 110 95 65 80 -10 5 20 35 50 -25 2 4 6 8 10 12 14 16 18 0 -40 125 high to low inb_ to outa_ low to high propagation delay vs. supply voltage max14850 toc20 v dda (v) propagation delay (ns) 5.0 4.5 4.0 3.5 5 10 15 20 25 30 35 0 3.0 5.5 v gndb - v gnda = -100v v gndb - v gnda = 0v v gndb - v gnda = +100v v dda = v ddb i/oa_ to i/ob_ low to high transition pullup = 1ki propagation delay vs. supply voltage max14850 toc21 v dda (v) propagation delay (ns) 5.0 4.5 4.0 3.5 5 10 15 20 0 3.0 5.5 v gndb - v gnda = -100v v gndb - v gnda = 0v v gndb - v gnda = +100v v dda = v ddb i/oa_ to i/ob_ high to low transition v dda (v) propagation delay (ns) 5.0 4.5 4.0 3.5 5 10 15 20 25 30 0 3.0 5.5 propagation delay vs. supply voltage max14850 toc23 v gndb - v gnda = -100v v gndb - v gnda = 0v v gndb - v gnda = +100v v dda = v ddb i/ob_ to i/oa_ low to high transition pullup = 1ki propagation delay vs. temperature max14850 toc25 propagation delay (ns) 10 20 30 40 50 60 0 t a (c) 110 95 80 65 50 35 20 5 -10 -25 -40 125 low to high i/ob_ to i/oa_ pullup = 1ki high to low propagation delay vs.temperature max14850 toc22 t a (c) propagation delay (ns) 110 95 80 65 50 35 20 5 -10 -25 10 20 30 40 50 0 -40 125 high to low i/oa_ to i/ob_ pullup = 1k i low to high v dda (v) propagation delay (ns) 5.0 4.5 4.0 3.5 10 20 30 40 50 60 0 3.0 5.5 propagation delay vs. supply voltage max14850 toc24 v gndb - v gnda = -100v v gndb - v gnda = 0v v gndb - v gnda = +100v v dda = v ddb i/ob_ to i/oa_ high to low transition max14850 ??
maxim integrated products 11 max14850 ?? ? ?? 1 v cca a???0.1f???v cca gnda gnda 2 ina1 a?1ina1?outb1 gnda 3 ina2 a?2ina2?outb2 gnda 4 outa1 a?1outa1?? gnda 5 outa2 a?2outa2?? gnda 6 i/oa1 a?/1i/oa1?i/ob1????? gnda 7 i/oa2 a?/2i/oa2?i/ob2????? gnda 8 gnda a??? 9 gndb b??? 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 v cca v ccb outb1 outb2 inb1 inb2 i/ob1 i/ob2 gndb top view ina1 ina2 i/oa1 outa1 outa2 i/oa2 gnda max14850 + so
maxim integrated products 12 max14850 ?? ?? ?? max14850?6????600v rms ? ??60????maxim? ?????????(emi) ??????? ??????? ??????/??? ?????? ???????50mbps? ??????2mbps max14850?i 2 cspi/microwire ? ???v cca v ccb ??v cca v ccb ?gndagndb ?max14850??????? ?? ? max14850??????? ????200v rms ???850v ??? ?() microwirenational semiconductor corporation??? ?? 10 i/ob2 b?/2i/ob2?i/oa2????? gndb 11 i/ob1 b?/1i/ob1?i/oa1????? gndb 12 inb2 b?2inb2?outa2 gndb 13 inb1 b?1inb1?outa1 gndb 14 outb2 b?2outb2?? gndb 15 outb1 b?1outb1?? gndb 16 v ccb b???0.1f???v ccb gndb gndb max14850 ina1 v cca v ccb gnda gndb 600v rms digital isolator ina2 outa1 outa2 i/oa1 i/oa2 outb1 outb2 inb1 inb2 i/ob1 i/ob2
maxim integrated products 13 max14850 ?? ?/?? max14850?600v rms ???v gnda v gndb ???850vdc?????? 3.0v5.5v(v cca - v gnda ) ?(v ccb - v gndb )????? ?? max14850????????? ???????? ? ? ?????? dc50mbps???? ?ttlcmos?? ?? ?????? ???????? ??i/oa1i/oa2? ?(v it )i/oa1i/oa2??? 50mv??a????? ??b? i/oa1i/oa2i/ob1i/ob2??? ???????? ???b?30maa ?10ma ( electrical characteristics ) ???i 2 c?? ?? ?v cca v ccb ????? ????????? ???????? ????? ?????? ?v cca v ccb ?? ???????? ??( 1 )????? ??? ?Z? max14850?ulcsaiec 60747-5-2?? ul1577Z720v rms v iso (??1 ?2 ) max14850 100%?? ?3?????? 2. ?Z?() 1. ??? v in v cca v ccb v outa v outb 1 powered powered 1 1 0 powered powered 0 0 x under voltage powered follows v cca 1 x powered under voltage 1 follows v ccb safety agency standard isolation number file number ul ul1577 recognized 600v rms isolation voltage for 60 seconds pending vde approved to 60747-17 basic insulation, 600v rms for 60 seconds pending
maxim integrated products 14 max14850 ?? ?? ? ???t??? ???????max14850? ????????? ? ?4 ??max14850?? ??? ? max14850????????? v cca v ccb ????? ???????????? ?? ???????0.1 f ???v cca v ccb gndagndb ???? ?4. ???? ?3. ?? life expectancy vs. working isolation voltage working isolation voltage (v iowm ) - v rms working life - years (log scale) 700 600 500 400 300 200 100 0.1 1 10 100 50 1000 0.001 0 800 v iowm = 200v rms v cca v ccb v outa_ v outb_ v i /oa_ v i /ob_ 400s/div 5v/div
maxim integrated products 15 max14850 ?? ?() i/ oa 1s da scl rst dac ldac sda i/ oa2 scl ina1 gpio1 reset load dac ina2 gpio2 outa1 outa2 i/ ob 1 i/ ob 2 outb1 outb2 inb1 inb2 gpio3 spare c gnda gndb v cca v ccb r pu a r pu a r pu b r pu b 0.1f 0.1f 3.3v 5v v ccb monitor max14850 600v rm s isolation
maxim integrated products 16 max14850 ?? ?? process: bicmos ? + ??(pb)/rohs??? ?? ?????(?)? china. maxim-ic.com/packages ????+# -?rohs???????? ?????rohs???? ?() part temp range pin-package max14850ase+ -40nc to +125nc 16 so ? ? ?? 16 so s16+3 21-0041 90-0097 i/ oa1 gpio1 outa1 rx i/ oa2 ina1 rts ina2 tx outa2 i/ ob 1 inb1 i/ ob 2 outb1 outb2 inb2 gpio3 c gnda gndb v cca v ccb r pu a r pu b 0.1f 0.1f 3.3v 5v v ccb monitor max13085e 600v rm s isolation re ro de di a b max14850
?? maximmaxim????????maxim??????????? ???(??)?????? maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 17 ? 2012 maxim integrated products maximmaxim integrated productsinc.??? maxim 8328 100083 ?800 810 0310 010-6211 5199 010-6211 5299 ? ? ? ?? 0 3/12 max14850 ??

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